bipolarics, inc. part number b 3 0v 1 32 0 g pe = 1 0 .0 db @ 1.0 ghz p 1db power output at 1 db compression: f = 1.0 ghz w 4 .0 g 1db gain at 1db compression: f = 1.0 ghz db 10 .0 collector efficiency class a % 30 c cb collector base capacitance: f = 1 mhz, i e = 0 pf 1. 3 4 .0 h fe forward current transfer ratio: v ce = 8v, i c = 4 0 0 ma 20 60 100 p t total power dissipation w 12 v cbo collector-base voltage 6 0 v symbol parameters rating units symbol parameters & conditions unit min. typ. max. v ce =15v, i c = 8 00 ma, class a, unless stated product data sheet silicon microwave power transistor v ceo collector-emitter voltage 3 0 v v ebo emitter-base voltage 3 .0 v i c collector current (instantaneous) 12 0 0 ma t j junction temperature 200 o c t stg storage temperature -65 to +150 o c description and applications: bipolarics' b 3 0v 1 32 0 is a high performance, low cost silicon bipolar transistor intended for linear power applications at frequencies of 0.5 to 2.6 ghz. uniformity and reliability are assured by the use of advanced process techniques: ion implanted junctions, ion implanted ballast resistors and gold metallization. when the b 3 0v1 32 0 is bonded common emitter, linear output power of 8 watt can be achieved. absolute maximum ratings: features: high output power 8 w @ 1.0 ghz high gain bandwidth product f t = 6.0 ghz @ i c = 8 00 ma high gain performance d ata: electrical characteristics (t a = 25 o c)
page 2 bipolarics, inc part number b 3 0v 1 64 0 silicon microwave power transistor 0.11 (2.80) 1 2 3 4 45 0.060 (1.524) 0.880 (22.35) 0.030 (0.762) 0.004 (0.102) 0.210 (5.334) 0.045 (1.143) 0.225 (5.71) 1 2 3 4 45 1.030 (26.16) 0.055 (1.40) 0.280 dia (7.11 dia) 0.005 0.13 ( ) 0.13 (3.30) 50 ceramic 4 lead pak surface mount 28 0. 280 " pill package 20 0. 20 0 " pill package emitter collector base .125 (3.175) .050 (1.27) .050 (1.27) .090 (2.286) .050 (1.27) .050 (1.27) .140 (3.556) .250 (6.35) .250 (6.35) .560 (14.224) base .160 (4.064) .050 (1.27) .020 (.508) .070 (1.778) .190 (4.826) collector emitter base base collector emitter 0.086 (2.184) base base 08 ceramic so8 package notes: (unless otherwise specified) 1. dimensions are in 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice (mm) lead 1 2 3 4 20 & 28 base emitter base collector package drawings are not to scale.
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